vs-st230spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 1 document number: 94399 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 phase control thyristors (stud version), 230 a features ? center amplifying gate ? international standard case to-209ab (to-93) ? hermetic metal case wi th ceramic insulator ? (also available with glass-metal seal up to 1200 v) ? compression bonded encapsulation for heavy duty operations such as severe thermal cycling ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers ? ? ? ? electrical specifications product summary i t(av) 230 a v drm /v rrm 400 v, 1600 v v tm 1.55 v i gt 150 ma t j -40 c to 125 c package to-209ab (to-93) diode variation single scr to-209ab (to-93) major ratings and characteristics parameter test conditions values units i t(av) 230 a t c 85 c i t(rms) 360 a i tsm 50 hz 5700 a 60 hz 5970 i 2 t 50 hz 163 ka 2 s 60 hz 149 v drm /v rrm 400 to 1600 v t q typical 100 s t j -40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma vs-st230s 04 400 500 30 08 800 900 12 1200 1300 16 1600 1700
vs-st230spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 2 document number: 94399 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average on-state current ? at case temperature i t(av) 180 conduction, half sine wave 230 a 85 c maximum rms on-state current i t(rms) dc at 78 c case temperature 360 a maximum peak, one-cycle ? non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, ? initial t j = t j maximum 5700 t = 8.3 ms 5970 t = 10 ms 100 % v rrm ? reapplied 4800 t = 8.3 ms 5000 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 163 ka 2 s t = 8.3 ms 148 t = 10 ms 100 % v rrm ? reapplied 115 t = 8.3 ms 105 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 1630 ka 2 ? s low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.92 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 0.98 low level value of on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.88 m ? high level value of on-state slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 0.81 maximum on-state voltage v tm i pk = 720 a, t j = t j maximum, t p = 10 ms sine pulse 1.55 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 600 ma maximum (typical) latching current i l 1000 (300) switching parameter symbol test conditions values units maximum non-repetiti ve rate of rise ? of turned-on current di/dt gate drive 20 v, 20 ? , t r ? 1 s ? t j = t j maximum, anode voltage ? 80 % v drm 1000 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s ? v d = 0.67 % v drm , t j = 25 c 1.0 s typical turn-off time t q i tm = 300 a, t j = t j maximum, di f /dt = 20 a/s, ? v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 ? , t p = 500 s 100 blocking parameter symbol test conditions values units maximum critical rate of rise ? of off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and ? off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 30 ma
vs-st230spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 3 document number: 94399 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p ? 5 ms 10.0 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positi ve gate current i gm t j = t j maximum, t p ? 5 ms 3.0 a maximum peak positive gate voltage + v gm t j = t j maximum, t p ? 5 ms 20 v maximum peak negative gate voltage - v gm 5.0 dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger/ current/voltage are the lowest value which will tr igger all units 12 v anode to cathode applied 180 - t j = 25 c 90 150 ma t j = 125 c 40 - dc gate voltage required to trigger v gt t j = - 40 c 2.9 - v t j = 25 c 1.8 3.0 t j = 125 c 1.2 - dc gate current not to trigger i gd t j = t j maximum maximum gate curre nt/voltage not to trigger is th e maximum value which will not trig ger any unit with rated v drm anode to cathode applied 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction ? temperature range t j -40 to 125 c maximum storage temperature range t stg -40 to 150 maximum thermal resistance, ? junction to case r thjc dc operation 0.10 k/w maximum thermal resistance, ? case to heatsink r thc-hs mounting surface, smooth, flat and greased 0.04 mounting torque, 10 % non-lubricated threads 31 (275) n m (lbf ?? in) lubricated threads 24.5 (210) approximate weight 280 g case style see dimensions - link at the end of datasheet to-209ab (to-93) ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.016 0.012 t j = t j maximum k/w 120 0.019 0.020 90 0.025 0.027 60 0.036 0.037 30 0.060 0.060
vs-st230spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 4 document number: 94399 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ratings ch aracteristics fig. 2 - current ratings characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics 80 90 100 110 120 130 maximum allowa b le case temperature (c) 30 60 90 120 180 average on- s tate current (a) conduction angle s t230 s s erie s r thjc (dc) = 0.1 k/w ? 0 50 100 150 200 250 70 80 90 100 110 120 130 0 100 200 300 400 dc 30 60 90 120 180 average on- s tate current (a) maximum allowa b le case temperature (c) conduction period s t230 s s erie s r thjc (dc) = 0.1 k/w ? 50 75 100 125 maximum allowa b le am b ient temperature (c) r = 0.8 k/w - delta r th s a 0 . 1 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 8 k / w 1.2 k/w 0 50 100 150 200 250 300 350 0 50 100 150 200 250 180 120 90 60 30 rm s limit conduction angle maximum average on- s tate power loss (w) average on- s tate current (a) s t230 s s erie s t = 125 c j ? 50 75 100 125 maximum allowa b le am b ient temperature (c) r = 0 . 08 k/w - delta r th s a 0 . 1 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 8 k / w 1 . 2 k /w 0 50 100 150 200 250 300 350 400 450 0 50 100 150 200 250 300 350 400 dc 180 120 90 60 30 rm s limit conduction period maximum average on- s tate power loss (w) average on- s tate current (a) s t230 s s erie s t = 125 c j ?
vs-st230spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 5 document number: 94399 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetitive surge current fig. 6 - maximu m non-repetitive surge current fig. 7 - on-state volt age drop characteristics fig. 8 - thermal impedance z thjc characteristics 2000 2500 3000 3500 4000 4500 5000 5500 1 10 100 num b er of equal amplitu d e half cycle current pulses (n) peak half s ine wave on- s tate current (a) initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s s t230 s s erie s at any rated load condition and with rated v rrm applied following s urge. 2000 2500 3000 3500 4000 4500 5000 5500 6000 0.01 0.1 1 pulse train duration (s) peak half s ine wave on- s tate current (a) initial t j = 125 c no voltage reapplied rated v rrm reapplied s t230 s s erie s maximum non repetitive s urge current v s . pul s e drain duration. control of conduction may not be maintained instantaneous on- s tate voltage (v) instantaneous on- s tate current (a) 10 100 1000 10 000 0.5 1.5 2.5 3.5 4.5 t j = 25 c s t230 s s erie s t j = 125 c 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 s quare wave pulse duration (s) transient thermal impe d ance z thjc (k/w) s t230 s s erie s s teady s tate value r thjc = 0.1 k/w (dc operation)
vs-st230spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 6 document number: 94399 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 v g d i g d (b) (a) t j =25 c t j =125 c t j =-40 c (1) (2) (3) instantaneous g ate current (a) instantaneous g ate voltage (v) a) recommended load line for b) recommended load line for < = 30 % rated di f /dt : 10 v, 10 fre q uency limited by p g (av) rated di f /dt : 20 v, 10 ; t r <=1 s t r < = 1 s (1) p g m = 10 w, t p = 4 m s (2) p g m = 20 w, t p = 2 m s (3) p g m = 40 w, t p = 1 m s (4) p g m = 60 w, t p = 0.66 m s device: s t230 s s erie s rectangular gate pul s e (4) 1 - vishay semiconductors product - thyristor 2 - essential part number 3 - 0 = converter grade 4 9 10 - none = standard production - pbf = lead (pb)-free - s = compression bonding stud 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 3/4"-16unf2a threads 7 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast-on terminals (gate and auxiliary cathode leads) 8 - none = ceramic housing (over 1200 v) v = glass-metal seal (only up to 1200 v) note: for metric device m16 x 1.5 contact factory device code 5 1 3 2 4 6 7 8 9 10 st vs- 23 0 s 16 p 0 v pbf links to related documents dimensions www.vishay.com/doc?95082
outline dimensions www.vishay.com vishay semiconductors revision: 05-mar-12 1 document number: 95082 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-209ab (to-93) dimensions in millimeters (inches) note (1) for metric device: m16 x 1.5 - length 21 (0.83) maximum fast-on terminals white shrink red shrink red cathode red silicon rubber 210 (8.26) 10 (0.39) c.s. 0.4 mm 2 (0.0006 s.i.) 90 (3.54) min. 4.3 (0.17) dia. 19 (0.75) max. 38.5 (1.52) max. 16 (0.63) max. 8.5 (0.33) dia. glass metal seal 28.5 (1.12) max. dia. 220 (8.66) 10 (0.39) sw 32 c.s. 25 mm 2 (0.039 s.i.) flexible leads 4 (0.16) max. 35 (1.38) max. 3/4"-16unf-2a (1) 27.5 (1.08) max. white gate white shrink red shrink red cathode red silicon rubber 210 (8.26) 10 (0.39) c.s. 0.4 mm 2 (0.006 s.i.) 38.5 (1.52) max. 220 (8.66) 10 (0.39) ceramic housing 90 (3.54) min. 4.3 (0.17) dia. 19 (0.75) max. 8.5 (0.33) dia. 35 (1.38) max. 3/4"-16unf-2a (1) 27.5 (1.08) max. sw 32 27.5 (1.08) max. dia. white gate 16 (0.63) max. amp. 280000-1 ref-250 9.5 (0.37) min. 22 (0.86) min. c.s. 25 mm 2 (0.039 s.i.) flexible leads 4 (0.16) max. 9.5 (0.37) min. 22 (0.86) min.
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